科研工作: 主要从事光电功能薄膜材料可控合成、超薄栅与高迁移率沟道材料的界面控制及MOS器件构筑等相关领域的研究。在high-k栅极材料的制备、界面物性和高迁移率MOS器件构筑等方面取得较好成果,以第一作者和通讯作者在J. Mater. Chem. C、J. Mater. Sci. Tech.、Appl. Sur. Sci.、J. Chem. Phys.等国内外主流期刊上发表论文30余篇。主持国家自然科学基金青年基金1项、安徽省自然基金面上基金1项、高校优秀青年骨干人才项目1项。并以主要参与人完成国家自然科学基金面上基金2项、青年基金1项,参与完成多项省部级科研项目。多家国际期刊审稿人。 1. 国家自然科学基金:铪基高k栅介质/钝化层/Ge堆栈结构设计、界面调控及其MOS器件性能研究(项目号:51702003); 2. 安徽省自然科学基金:HfGdO/IPL/Ge堆栈结构设计、界面调控及性能优化(项目号:1808085ME130); 3. 安徽省高等学校科学研究项目:HfGdON/AlN/GaSb叠层栅界面失稳调控及其MOS器件性能优化(2022AH050848); 4.安徽省教育厅高校优秀青年骨干人才项目(gxgwfx2019016); 5.安徽省教育厅优秀青年人才基金:Cn(n≦100)团簇的异构体谱及生长动力学,(项目批准号:2010SQRL053); 6.安徽大学微弱信号感测材料与器件集协同创新研究中心开放课题:石墨烯与铪基高k栅介质的界面研究和MOS器件研究(项目批准号:WRXH2017)。 近五年发表论文: 1. J.Gao, J.L. Deng, et al. Multifunctional TiO2/g-C3N4/Ag nanorod array film as a powerful substrate for surface-enhanced Raman scattering detection and green degradation[J]. Ceram. Int., 932 (2023) 167680 2. J.L. Deng, J.Gao(通讯), et al. Construction of Z-scheme TiO2/Ag/ZIF-8 nanorod array film with boosting photocatalytic and photoelectrochemical properties[J]. J. Alloys Comp. 932 (2023) 167680 3. M. Liu, L.C. Zheng, J.L. Deng, J.Gao(通讯), et al. Construction of Ag nanoparticle decorated AgBr/BiVO4 shell/core structure plasmonic photocatalysts towards high photocatalytic elimination of contaminations under visible light[J]. J. Alloys Comp. 931 (2023) 167584(SCI一区) 4. J.L. Deng, J.Gao(通讯), et al. SnS Nanoparticles and MoS2 Nanosheets Co-Decorated TiO2 Nanorod Film with Remarkable Photocatalytic and Photoelectrochemical Properties[J]. J. Electro. Soc., 169(2022)56513. 5. J. Gao, J.T. Hu, et al. Fabrication of Z-Scheme TiO2/SnS2/MoS2 ternary heterojunction arrays for enhanced photocatalytic and photoelectrochemical performance under visible light[J]. J. Solid State Chem.,307(2022)122737. 6. J. Gao, X.W. Sun. 2D Z-scheme TiO2/SnS2 heterojunctions with enhanced visible-light photocatalytic performance for refractory contaminants and mechanistic insights[J]. New J. Chem., 45(2021)16131. 7. L. Zheng, X. Sun, R. Zhang, J. Gao*(通讯). Enhanced photocatalytic performance of ammonia self-etched holely g-c 3 n 4 decorated with anatase nanoflakes by a facile synthesis process[J]. Appl. Surf. Sci., 542(2021), 148580. 8. J. Gao, G. He, L. Hao, et al. A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates[J]. RSC Advance 10 (2020) 14733. 9. J. Gao, L. Zhao, Y. F. Wang, et al. Ultrathin alumina wrapped TiO2 nanorods for enhance photoelectrochemical performance via atomic layer deposition method[J]. Chem. Phys. 536 (2020) 110791. 10. J. Gao, X. W. Sun, Y. F. Wang, et al. Ultrathin Al2O3 passivation layer-wrapped Ag@TiO2 nanorods by atomic layer deposition for enhanced photoelectrochemical performance[J]. Appl. Surf. Sci. 499 (2020) 143971. 11. J. Gao, G. He, D. Wang, and S. Liang. Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf0.5Al0.5O/Si gate stacks using Al2O3 passivation layer with various thickness[J]. J. Vac. Sci. Technol. A, 37 (2019) 011101. 12. J. Gao, G. He, S. Liang, D. Wang, B. Yang. Comparative study on in-situ surface cleaning effect of intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics[J]. J. Mater. Chem. C, 6 (2018) 2546-2555. |